Lun-Lun Chen

发表

Synthesis and characterization of metallic TaSi2 nanowires

Chih-Ming Hsu, Yu-Lun Chueh, Chih-Ming Hsu, 2005 .

Epitaxial growth of NiSi2 on ion‐implanted silicon at 250–280 °C

Lun-Lun Chen, Lun-Lun Chen, Shi-Hsiang Lu, 1986 .

Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties

Chia-Ching Lee, P. H. Yeh, Lun-Lun Chen, 2007 .

Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

Min-Lin Wu, Lun-Lun Chen, Lun-Lun Chen, 2010 .

Effect of Nitrogen Passivation on the Performance of MIM Capacitors With a Crystalline- Stacked Insulator

Chia-Chun Lin, Min-Lin Wu, Lun-Lun Chen, 2012 .

Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si

Cho-Jen Tsai, Lun-Lun Chen, S. L. Cheng, 2005 .

The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted (0 0 1)Si under high current stress

S. L. Cheng, Lun-Lun Chen, H. H. Lin, 2000 .

$\hbox{ZrTiO}_{x}$-Based Resistive Memory With MIS Structure Formed on Ge Layer

Chia-Chun Lin, Min-Lin Wu, Lun-Lun Chen, 2012, IEEE Electron Device Letters.

Cross‐sectional transmission electron microscope study of the growth kinetics of hexagonal MoSi2 on (001)Si

Huang-Chung Cheng, L. J. Chen, Lun-Lun Chen, 1987 .

Interfacial reactions of nickel thin films on BF+2‐implanted (001)Si

Lun-Lun Chen, Lun-Lun Chen, W. J. Chen, 1991 .