Yi Pei

发表

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

S. Kolluri, S. Keller, S. Denbaars, 2009, IEEE Electron Device Letters.

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Wei Mao, Xiaohua Ma, Yue Hao, 2011 .

X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2008 .

A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design

Robert A. York, Umesh K. Mishra, Valiallah Zomorrodian, 2010 .

AlGaN/GaN HEMTs large signal model considering nonlinear Cds

Yang Li, Chenggong Yin, Yi Pei, 2017, 2017 International Applied Computational Electromagnetics Society Symposium (ACES).

MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications

Rongming Chu, S. Denbaars, U. Mishra, 2009, IEEE Electron Device Letters.

Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Patrick Roblin, Christiane Poblenz, Siddharth Rajan, 2010, IEEE Transactions on Microwave Theory and Techniques.

Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

Shuji Nakamura, Umesh K. Mishra, S. P. DenBaars, 2009 .

Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz

Umesh K. Mishra, Rongming Chu, Stacia Keller, 2007 .

A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs

M. Higashiwaki, Rongming Chu, S. Keller, 2008, 2008 Device Research Conference.

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Umesh K. Mishra, Martin Kuball, Michael J. Uren, 2012 .

Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source

Patrick Roblin, Andrew Malonis, Christiane Poblenz, 2009, 2009 74th ARFTG Microwave Measurement Conference.

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Rongming Chu, S. Keller, Man Hoi Wong, 2008, IEEE Electron Device Letters.

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Steven A. Ringel, Umesh K. Mishra, Siddharth Rajan, 2013 .

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

James S. Speck, Umesh K. Mishra, Nidhi, 2009 .

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2007 .

Next generation defect characterization in nitride HEMTs

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2011 .

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2012 .

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

Martin Kuball, U. Mishra, M. Ťapajna, 2010, IEEE Electron Device Letters.

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Steven A. Ringel, Umesh K. Mishra, S. P. DenBaars, 2013 .

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

Lei Li, Fujiang Lin, Weiqiang Qian, 2015, 2015 Asia-Pacific Microwave Conference (APMC).