E. V. Lutsenko

Luminescence and stimulated emission from gan on silicon substrates heterostructures

Michael Heuken, Holger Kalisch, A. Alam, 2002 .

Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates

Michael Heuken, Holger Kalisch, A. Alam, 2005 .

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

G. P. Yablonskii, A. A. Sitnikova, S. Ivanov, 2010 .

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

V. Yu. Davydov, G. P. Yablonskii, A. A. Sitnikova, 2009 .

Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates

Michael Heuken, Holger Kalisch, Bernd Schineller, 2007 .

Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm

Michael Heuken, Holger Kalisch, H. Protzmann, 2001 .

Growth, Stimulated Emission, Photo- and Electroluminescence of InGaN/GaN EL-Test Heterostructures

Michael Heuken, H. Protzmann, Bernd Schineller, 2003 .