Xing Long Shao

Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory.

Sijung Yoo, Hao Jiang, Cheol Seong Hwang, 2015, Nanoscale.

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2017 .

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

Hao Jiang, Cheol Seong Hwang, C. Hwang, 2017, Nanoscale.

Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure

Hao Jiang, Kailiang Zhang, Cheol Seong Hwang, 2015 .

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2017, Nanoscale.

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2016, Nanoscale.

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

Sijung Yoo, Young Jae Kwon, Tae Hyung Park, 2016, ACS applied materials & interfaces.