Jin Shi Zhao

Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory.

Sijung Yoo, Hao Jiang, Cheol Seong Hwang, 2015, Nanoscale.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

Hao Jiang, Cheol Seong Hwang, C. Hwang, 2017, Nanoscale.

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2016, Nanoscale.

Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO2 Thin Film

Cheol Seong Hwang, Gun Hwan Kim, C. Hwang, 2010 .