Masashi Kumagawa

Formation mechanism of InxGa1−xAs bridge layers on patterned GaAs substrates

Yasuhiro Hayakawa, Y. Hayakawa, T. Koyama, 2000 .

Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy

Yasuhiro Hayakawa, T. Sakurai, Y. Hayakawa, 1996 .

Numerical analysis of the dissolution process of GaSb into InSb melt under different gravity conditions

Yasunori Okano, Yasuhiro Hayakawa, K. Arafune, 2003 .

Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

Yasuhiro Hayakawa, K. Arafune, P. Jayavel, 2005 .

Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 µm

Hirofumi Kan, Tomuo Yamaguchi, Mitsuru Aoyama, 1999 .

Role of lateral growth fronts in the formation of InxGa1−xAs bridge layer on trench substrates

Yasuhiro Hayakawa, Y. Hayakawa, T. Koyama, 2000 .