J. F. Nodin

Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO2-RRAM integrated in a 65nm CMOS technology

S. Jeannot, V. Jousseaume, M. Gros-Jean, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Highly automated sequence for Phase Change Memory test structure characterization

G. Reimbold, B. DeSalvo, J. Cluzel, 2010, 2010 International Conference on Microelectronic Test Structures (ICMTS).

Emerging memory technologies: Challenges and opportunities

B. DeSalvo, V. Jousseaume, E. Vianello, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Phase Change Memory advanced electrical characterization for conventional and alternative applications

G. Reimbold, B. DeSalvo, A. Toffoli, 2012, 2012 IEEE International Conference on Microelectronic Test Structures.

Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs

G. Auvert, L. Perniola, Andrea Fantini, 2011 .

Carbon-doped GeTe: A promising material for Phase-Change Memories

G. Reimbold, Sylvain Maitrejean, D. Blachier, 2011 .

Effect of SET temperature on data retention performances of HfO2-based RRAM cells

C. Muller, S. Jeannot, E. Vianello, 2014, 2014 IEEE 6th International Memory Workshop (IMW).

Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells

Sylvain Maitrejean, A. Toffoli, L. Perniola, 2011 .