Yun Daniel Park

发表

A Group‐IV Ferromagnetic Semiconductor: MnxGe1‐x.

Aubrey T. Hanbicki, George Spanos, J. E. Mattson, 2002 .

Magnetic and structural properties of Co, Cr, V ion-implanted GaN

Stephen J. Pearton, S. N. G. Chu, Z. G. Khim, 2003 .

Wide band gap ferromagnetic semiconductors and oxides

David P. Norton, Stephen J. Pearton, Lynn A. Boatner, 2003 .

Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques

Dorota Temple, Paul H. Holloway, Stephen J. Pearton, 2000 .

Effect of inert gas additive on Cl2-based inductively coupled plasma etching of NiFe and NiFeCo

S. J. Pearton, Hyun Cho, Jeffrey R. Childress, 1999 .

Ferromagnetism in cobalt-implanted ZnO

John D. Budai, David P. Norton, Matthew F. Chisholm, 2003 .

Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy

John M. Zavada, Stephen J. Pearton, Brent P. Gila, 2002 .

Advances in wide bandgap materials for semiconductor spintronics

John D. Budai, David P. Norton, Stephen J. Pearton, 2003 .

Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode–giant magnetoresistance circuits

A. S. Bracker, Aubrey T. Hanbicki, Richard Magno, 2001 .

High performance CNT point emitter with graphene interfacial layer

Ji-Beom Yoo, Taewoo Kim, Gun-Sik Park, 2014, Nanotechnology.