A. G. Nassiopoulos

Bulk silicon micromachining using porous silicon sacrificial layers

G. Kaltsas, A. G. Nassiopoulos, 1997 .

Anomalous effects on the current‐voltage characteristics of p‐channel metal‐oxide‐semiconductor transistors in the temperature range 4.2–50 K

D. Tsamakis, E. Rocofyllou, A. G. Nassiopoulos, 1990 .

Characterization of a positive-tone wet silylation process with the AZ 5214 photoresist

Evangelos Gogolides, Michael Hatzakis, M. Hatzakis, 1994 .

Micro-Raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes

G. Kaltsas, E. Anastassakis, G. Kaltsas, 1998 .

ELECTROLUMINESCENT DEVICE BASED ON SILICON NANOPILLARS

Dimitrios Papadimitriou, A. G. Nassiopoulos, A. Nassiopoulos, 1996 .