K.M. Cham

A study of the trench surface inversion problem in the trench CMOS technology

K.M. Cham, S.-Y. Chiang, 1983, IEEE Electron Device Letters.

Characteristics of submicrometer CMOS transistors in implanted-buried-oxide SOI films

S.Y. Chiang, K. Hashimoto, T.I. Kamins, 1985, 1985 International Electron Devices Meeting.

Characterization and modeling of the trench surface inversion problem for the trench isolated CMOS technology

K.M. Cham, Shang-yi Chiang, D. Wenocur, 1983, 1983 International Electron Devices Meeting.

Optimization of sub-micron p-channel FET structure

K.M. Cham, Shang-yi Chiang, R.D. Rung, 1983, 1983 International Electron Devices Meeting.

Submicrometer thin gate oxide P-channel transistors with P+polysilicon gates for VLSI applications

Horng-Sen Fu, K.M. Cham, C.K. Lau, 1986, IEEE Electron Device Letters.

Device design for the submicrometer p-channel FET with n+polysilicon gate

K. Cham, Shang-Yi Chiang, K.M. Cham, 1984, IEEE Transactions on Electron Devices.