M. Orlowski

Submicron short channel effects due to gate reoxidation induced lateral interstitial diffusion

C. Mazure, F. Lau, M. Orlowski, 1987, 1987 International Electron Devices Meeting.

Firing of a Pulse and its Control Using a Novel Floating Electrode Bi-Resistive Device

Yuhong Kang, M. Orlowski, Tong Liu, 2012 .

Sub micron P-MOSFETs under static and swap stress

W. Weber, P. Murkin, M. Orlowski, 1987, 1987 Symposium on VLSI Technology.

CMOS challenges of keeping up with Moore's Law

M. Orlowski, 2005, 2005 13th International Conference on Advanced Thermal Processing of Semiconductors.

Guidelines for reverse short-channel behavior

C. Mazure, M. Orlowski, 1989, IEEE Electron Device Letters.

Finfet with isolated n+ and p+ gate regions strapped with metal and polysilicon

J. Conner, A. Vandooren, B. E. White, 2003, 2003 IEEE International Conference on SOI.

Influence of transistor degradation on CMOS performance and impact on life time criterion

D. Schmitt-Landsiedel, J. Winnerl, F. Neppl, 1988, Technical Digest., International Electron Devices Meeting.

Moderately doped channel multiple-finFET for logic applications

J. Mogab, D. Burnett, Y. Shiho, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Mixed-signal performance of sub-100nm fully-depleted SOI devices with metal gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

A. Vandooren, S. Samavedam, I. To, 2003, IEEE International Electron Devices Meeting 2003.

The Hot-Electron Problem in Submicron MOSFET

W. Hansch, W. Weber, W. Weber, 1988, ESSDERC '88: 18th European Solid State Device Research Conference.