Jeff B. Casady

Silicon Carbide Power Electronics for High-Temperature Power Conversion and Solid-State Circuit Protection in Aircraft Applications

Michael S. Mazzola, Volodymyr Bondarenko, Robin Schrader, 2011 .

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

J. Neil Merrett, J. B. Dufrene, J. Casady, 2003 .

A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices

Volodymyr Bondarenko, Robin L. Kelley, David C. Sheridan, 2011 .

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Michael S. Mazzola, Lin Cheng, Volodymyr Bondarenko, 2008 .

Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits

Michael S. Mazzola, Yaroslav Koshka, James Gafford, 2004 .

Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules

Volodymyr Bondarenko, Robin L. Kelley, David C. Sheridan, 2011 .

Comparison and optimization of edge termination techniques for SiC power devices

John D. Cressler, Guofu Niu, J. B. Dufrene, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET

Michael S. Mazzola, Robin L. Kelley, Jeff B. Casady, 2006 .

SiC Smart Power JFET Technology for High-Temperature Applications

Robin L. Kelley, V. Bondarenko, Jeff B. Casady, 2006 .

Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current

Volodymyr Bondarenko, David C. Sheridan, Jeff B. Casady, 2010 .

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Michael S. Mazzola, John D. Cressler, Yaroslav Koshka, 2005 .