Wangran Wu

Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile Strains

Wenjie Yu, Chang Liu, Xi Wang, 2014, IEEE Electron Device Letters.

RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs

Mengwei Si, Peide D. Ye, Heng Wu, 2016, 2016 IEEE Symposium on VLSI Technology.

Electrical properties of strained Si p-n junctions

Xiangming Xu, Yi Shi, Yi Zhao, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Anomalous bias temperature instability on accumulation-mode Ge and III-V MOSFETs

Mengwei Si, Peide D. Ye, Heng Wu, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).