Qian Zhou

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

Yee-Chia Yeo, Genquan Han, Pengfei Guo, 2011 .

Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

Luping Shi, Xiao Gong, Yee-Chia Yeo, 2009, 2009 International Semiconductor Device Research Symposium.

Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

Wei Wang, Gengchiau Liang, Xin Xu, 2015, IEEE Transactions on Electron Devices.

Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

Bin Liu, Ran Cheng, Xiao Gong, 2013, 2013 Symposium on VLSI Technology.

In0.7Ga0.3As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

Xiao Gong, Yee-Chia Yeo, Clement Hsingjen Wann, 2011 .

High-Performance Germanium $\Omega$ -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

Bin Liu, Xiao Gong, Yee-Chia Yeo, 2012, IEEE Electron Device Letters.

Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

Yee-Chia Yeo, Y. Yeo, Qian Zhou, 2013, IEEE Transactions on Electron Devices.

A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs

Xiao Gong, Yee-Chia Yeo, Ivana, 2012 .

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

Wei Wang, Gengchiau Liang, Xiao Gong, 2015, Optics express.