Joël Leymarie

AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111)

Lionel Hirsch, Fabrice Semond, Mathieu Leroux, 2002 .

Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

Fabrice Semond, Jean Massies, M. Mihailovic, 2003 .

InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K

Nicolas Grandjean, Benjamin Damilano, Jean Massies, 2000 .

Strong coupling of light with A and B excitons in GaN microcavities grown on silicon

Fabrice Semond, Mathieu Leroux, Jean Massies, 2006 .

Polariton lasing in a hybrid bulk ZnO microcavity

Sophie Bouchoule, Georg Rossbach, Nicolas Grandjean, 2011 .

Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy

Nicolas Grandjean, Mathieu Leroux, Jean Massies, 1994 .

Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells

Nicolas Grandjean, Benjamin Damilano, Jean Massies, 2002 .