Zs. Tokei

Comparison between intrinsic and integrated reliability properties of low-k materials

K. Croes, M. Pantouvaki, G. Beyer, 2011, 2011 International Reliability Physics Symposium.

Impact of Cu contacts on front-end performance: a projection towards 22nm node

M. Van Hove, T. Chiarella, G. Van den bosch, 2006, 2006 International Interconnect Technology Conference.

Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene lines

K. Maex, M. Stucchi, F. Iacopi, 2003, IEEE Electron Device Letters.

Simulation and measurement of the capacitance benefit of air gap interconnects for advanced technology nodes

Christopher J. Wilson, V. Truffert, Jürgen Bömmels, 2014 .

Integration of 50nm half pitch single damascene copper trenches in Black Diamond (R) II by means of double patterning 193nm immersion lithography on metal hardmask

Ivan Ciofi, Herbert Struyf, Gerald Beyer, 2008 .

Quantifying LER to predict its impact on BEOL TDDB reliability at 20nm ½ pitch

S. Demuynck, M. Stucchi, D. De Roest, 2010, 2010 IEEE International Interconnect Technology Conference.

Processing damage and electrical performance of porous dielectrics in narrow spaced interconnects

Karen Maex, Herbert Struyf, Michele Stucchi, 2004 .

Impact of LER on BEOL dielectric reliability: A quantitative model and experimental validation

M. Stucchi, I. Ciofi, J. Versluijs, 2009, 2009 IEEE International Interconnect Technology Conference.

Study of void formation kinetics in Cu interconnects using local sense structures

K. Croes, M. Lofrano, C.J. Wilson, 2011, 2011 International Reliability Physics Symposium.