Huan-Tsung Huang

Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's

Chin-Shan Hou, Kuo-Nan Yang, Ming-Jer Chen, 1998 .

Temperature dependent channel backscattering coefficients in nanoscale MOSFETs

Chih-Sheng Chang, Ming-Jer Chen, Huan-Tsung Huang, 2002, Digest. International Electron Devices Meeting,.

Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs

S. M. Jang, Kuo-Nan Yang, Y. M. Lin, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides

Mong-Song Liang, Chin-Shan Hou, M. Liang, 1999 .

On the SiO/sub 2/-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 /spl mu/m CMOS logic technology

Yo-Sheng Lin, Ying-Keung Leung, Chung-Cheng Wu, 2002 .

A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

Mong-Song Liang, S. M. Jang, Ming-Chin Chang, 2000 .

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

Douglas Yu, S. M. Jang, Douglas C. H. Yu, 2001 .