G. Melnychuk

发表

Structural Characterization Of Sic Epitaxial Layers Grown On Porous Sic Substrates

S. Saddow, M. Dudley, M. Shamsuzzoha, 2000 .

Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates

S. Saddow, M. Mynbaeva, N. Kuznetsov, 2001 .

Two- and three-dimensional simulation of chemical vapor deposition SiC epitaxial growth processes

M. Mazzola, G. Melnychuk, Y. Koshka, 2003 .

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2013 .

Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

G. Melnychuk, H. Das, Y. Koshka, 2010 .

Use of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2010 .

Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2010 .

Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth

Siva Kotamraju, G. Melnychuk, J. N. Merrett, 2010 .

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

G. Melnychuk, H. Das, Y. Koshka, 2009 .

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2009 .

Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2009 .

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

G. Melnychuk, H. Das, Y. Koshka, 2008 .

Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC

G. Melnychuk, Y. Koshka, H. Lin, 2008 .

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

G. Melnychuk, Y. Koshka, H. Lin, 2007 .

Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor

C. Wood, G. Melnychuk, Y. Koshka, 2006 .

Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2008 .

Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation

C. Wood, G. Melnychuk, Y. Koshka, 2006 .

Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates

S. Saddow, I. Nikitina, K. Mynbaev, 2001 .

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

G. Melnychuk, Y. Koshka, B. Krishnan, 2010 .

Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2008 .

Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor

G. Melnychuk, Y. Koshka, B. Krishnan, 2006 .