D. Mistele

D. Mistele, Amit Tannenbaum, Y. Stav, 2017, 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS).

Electrical properties of photoanodically generated thin oxide films on n-GaN

T. Rotter, H. Klausing, D. Mistele, 2001 .

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

T. Rotter, O. Katz, A. Horn, 2003 .

Heterostructure field effect transistor types with novel gate dielectrics

T. Rotter, H. Klausing, D. Mistele, 2001 .

Point defects in gamma-irradiated n-GaN

A. N. Smirnov, V. V. Emtsev, T. Rotter, 2000 .

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

T. Rotter, V. Davydov, H. Klausing, 2001 .

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors

E. Yalon, M. Eizenberg, G. Bahir, 2014, IEEE Transactions on Electron Devices.

Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

T. Rotter, A. Sánchez, A. Ponce, 2001 .

NiCr thin film resistor integration with InP technology

Dan Ritter, D. Mistele, D. Ritter, 2011 .

InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

G. Bahir, O. Katz, J. Salzman, 2004 .

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

V. V. Emtsev, T. Rotter, V. Davydov, 2000 .

Characteristics of In/sub x/Al/sub 1-x/N-GaN high-electron mobility field-effect transistor

G. Bahir, O. Katz, J. Salzman, 2005, IEEE Transactions on Electron Devices.

First AlGaN/GaN MOSFET with photoanodic gate dielectric

T. Rotter, H. Klausing, D. Mistele, 2002 .

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

T. Rotter, H. Klausing, D. Mistele, 2000 .