J. Aderhold

发表

Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions

T. Rotter, M. Heuken, M. Kamp, 2000 .

Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

Akio Yamamoto, Hiroshi Harima, Eugene E. Haller, 2002 .

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

T. Someya, Y. Arakawa, N. Kamata, 2004 .

Heat flow thermography for non-destructive testing of composites and natural materials – An application-oriented overview

P. Meinlschmidt, J. Aderhold, F. Schlüter, 2020 .

Composition dependence of optical phonon energies and Raman line broadening in hexagonal Al x Ga 1 − x N alloys

A. N. Smirnov, I. N. Goncharuk, V. Davydov, 2002 .

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

T. Rotter, H. Klausing, D. Mistele, 2001 .

Smooth GaN surfaces by photoinduced electro-chemical etching

T. Rotter, D. Mistele, J. Stemmer, 1999 .

Formation and Characterization of Oxides on GaN surfaces

T. Rotter, H. Klausing, D. Mistele, 2000 .

Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces

T. Rotter, J. Stemmer, J. Aderhold, 1997 .

Photoluminescence, depth profile, and lattice instability of hexagonal InN films

H. Neff, J. Aderhold, J. Graul, 2003 .

Influence of pre-etching on specific contact parameters for metal-GaN contacts

T. Rotter, F. Eberhard, M. Kamp, 1999 .

Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

H. Klausing, D. Mistele, F. Fedler, 2002 .

Investigation of Ni/au-contacts on p-GaN annealed in different atmospheres

T. Rotter, H. Klausing, D. Mistele, 2001 .

HRTEM study of AlxGa1−xN/AlN DBR mirrors

A. Ponce, S. Molina, H. Klausing, 2003 .

Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

A. Sánchez, S. Molina, F. J. Pacheco, 2001 .

High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

T. Rotter, A. Sánchez, S. Molina, 2000 .

Application of near-infrared spectroscopy for the fast detection and sorting of wood–plastic composites and waste wood treated with wood preservatives

P. Meinlschmidt, T. Salthammer, J. Aderhold, 2016, Wood Science and Technology.

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap.

Hiroshi Harima, Friedhelm Bechstedt, V. Yu. Davydov, 2002 .

Band Gap of Hexagonal InN and InGaN Alloys

Akio Yamamoto, Hiroshi Harima, D. A. Kurdyukov, 2002 .

Electrical properties of photoanodically generated thin oxide films on n-GaN

T. Rotter, H. Klausing, D. Mistele, 2001 .

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

T. Rotter, O. Katz, A. Horn, 2003 .

Heterostructure field effect transistor types with novel gate dielectrics

T. Rotter, H. Klausing, D. Mistele, 2001 .

Point defects in gamma-irradiated n-GaN

A. N. Smirnov, V. V. Emtsev, T. Rotter, 2000 .

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

T. Rotter, V. Davydov, H. Klausing, 2001 .

Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

T. Rotter, A. Sánchez, A. Ponce, 2001 .

Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys

V. V. Emtsev, V. Davydov, A. Yamamoto, 2003 .

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

V. V. Emtsev, T. Rotter, V. Davydov, 2000 .

First AlGaN/GaN MOSFET with photoanodic gate dielectric

T. Rotter, H. Klausing, D. Mistele, 2002 .

Application of near-infrared spectroscopy for the fast detection and sorting of wood–plastic composites and waste wood treated with wood preservatives

Peter Meinlschmidt, Tunga Salthammer, Jan Gunschera, 2015, Wood Science and Technology.

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

T. Rotter, H. Klausing, D. Mistele, 2000 .