J. Graul

发表

Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions

T. Rotter, M. Heuken, M. Kamp, 2000 .

Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

Akio Yamamoto, Hiroshi Harima, Eugene E. Haller, 2002 .

Influence of process technology on DC-performance of GaN-based HFETs

T. Rotter, I. Moerman, M. Marso, 2002 .

Polarization and self-polarization in thin PbZr1-xTixO3 (PZT) films

V. P. Afanasjev, A. A. Petrov, I. P. Pronin, 2001 .

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

T. Someya, Y. Arakawa, N. Kamata, 2004 .

Composition dependence of optical phonon energies and Raman line broadening in hexagonal Al x Ga 1 − x N alloys

A. N. Smirnov, I. N. Goncharuk, V. Davydov, 2002 .

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

T. Rotter, H. Klausing, D. Mistele, 2001 .

Smooth GaN surfaces by photoinduced electro-chemical etching

T. Rotter, D. Mistele, J. Stemmer, 1999 .

Formation and Characterization of Oxides on GaN surfaces

T. Rotter, H. Klausing, D. Mistele, 2000 .

Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces

T. Rotter, J. Stemmer, J. Aderhold, 1997 .

Photoluminescence, depth profile, and lattice instability of hexagonal InN films

H. Neff, J. Aderhold, J. Graul, 2003 .

Influence of pre-etching on specific contact parameters for metal-GaN contacts

T. Rotter, F. Eberhard, M. Kamp, 1999 .

Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

H. Klausing, D. Mistele, F. Fedler, 2002 .

HRTEM study of AlxGa1−xN/AlN DBR mirrors

A. Ponce, S. Molina, H. Klausing, 2003 .

Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

A. Sánchez, S. Molina, F. J. Pacheco, 2001 .

High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

T. Rotter, A. Sánchez, S. Molina, 2000 .

Phonon dispersion and Raman scattering in hexagonal GaN and AlN

A. N. Smirnov, Mikhail B. Smirnov, V. Yu. Davydov, 1998 .

Synthesis and properties of single phase diamond ceramics

G. Holzhüter, H. Neff, J. Graul, 1999 .

Growth mechanism of polycrystalline β‐SiC layers on silicon substrate

J. Graul, E. Wagner, 1972 .

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap.

Hiroshi Harima, Friedhelm Bechstedt, V. Yu. Davydov, 2002 .

Band Gap of Hexagonal InN and InGaN Alloys

Akio Yamamoto, Hiroshi Harima, D. A. Kurdyukov, 2002 .

Electrical properties of photoanodically generated thin oxide films on n-GaN

T. Rotter, H. Klausing, D. Mistele, 2001 .

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

T. Rotter, O. Katz, A. Horn, 2003 .

Heterostructure field effect transistor types with novel gate dielectrics

T. Rotter, H. Klausing, D. Mistele, 2001 .

Point defects in gamma-irradiated n-GaN

A. N. Smirnov, V. V. Emtsev, T. Rotter, 2000 .

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

T. Rotter, V. Davydov, H. Klausing, 2001 .

Ion Implantation in Semiconductors

J. Graul, I. Ruge, 1971 .

Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

T. Rotter, A. Sánchez, A. Ponce, 2001 .

Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys

V. V. Emtsev, V. Davydov, A. Yamamoto, 2003 .

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

V. V. Emtsev, T. Rotter, V. Davydov, 2000 .

ION IMPLANTATION IN SEMICONDUCTORS. Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects, Garmisch-Partenkirchen, Germany, May 24--28, 1971.

J. Graul, I. Ruge, 1971 .

First AlGaN/GaN MOSFET with photoanodic gate dielectric

T. Rotter, H. Klausing, D. Mistele, 2002 .

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

T. Rotter, H. Klausing, D. Mistele, 2000 .