R. Bruce

Resistivity of copper interconnects beyond the 7 nm node

L. Gignac, H. Miyazoe, D. Klaus, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

A novel low power phase change memory using inter-granular switching

H. L. Lung, S. Kim, Y. Zhu, 2016, 2016 IEEE Symposium on VLSI Technology.

Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory

K. Suu, S. Kim, Y. Zhu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material

H. L. Lung, M. BrightSky, Y. Zhu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

A scalable volume-confined phase change memory using physical vapor deposition

H. L. Lung, J. Y. Wu, M. BrightSky, 2013, 2013 Symposium on VLSI Technology.

An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

F. M. Lee, M. BrightSky, Y. Zhu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).