Q. Chen

发表

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaska, J. Yang, M. Asif Khan, 1997, IEEE Electron Device Letters.

Two-dimensional electron gas in AlGaN/GaN heterostructures

Hongxing Jiang, M. Khan, J. Lin, 1997 .

Gated photodetector based on GaN/AlGaN heterostructure field effect transistor

Michael S. Shur, M. Shur, M. Khan, 1995 .

CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

M. Asif Khan, M. Shur, L. Eastman, 1996, IEEE Electron Device Letters.

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

M. Nathan, M. Khan, Q. Chen, 1996 .

Study of contact formation in AlGaN/GaN heterostructures

M. Khan, J. Yang, S. Lau, 1997 .

P/He ion implant isolation technology for AlGaN/GaN HFETs

P. M. Asbeck, M. Asif Khan, G. Hanington, 1998 .

High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

John A. Higgins, Richard Pierson, Gerard J. Sullivan, 1998 .

GaN based heterostructure for high power devices

Michael S. Shur, Lester F. Eastman, Jinwook Burm, 1997 .

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Hadis Morkoç, Andrei Botchkarev, Hongxing Jiang, 1997 .