Lagally

发表

Nucleationless three-dimensional island formation in low-misfit heteroepitaxy

Sutter, Lagally, Lagally Mg, 2000, Physical review letters.

Step-bunching instability of vicinal surfaces under stress.

Zhang, Tersoff, Lagally, 1995, Physical review letters.

Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films.

Bean, Tersoff, Lagally, 1996, Physical review. B, Condensed matter.

Atomistic Processes in the Early Stages of Thin-Film Growth

Zhang, M. Lagally, Lagally, 1997, Science.

Self-organization in growth of quantum dot superlattices.

M. Lagally, J. Tersoff, Tersoff, 1996, Physical review letters.

Direct determination of step and kink energies on vicinal Si(001).

Webb, Swartzentruber, Lagally, 1990, Physical review letters.

Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001).

Savage, M. Lagally, Swartzentruber, 1990, Physical review letters.

Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy

Swartzentruber, Lagally, Qin, 2000, Physical review letters.

Real-time observations of vacancy diffusion on Si(001)-(2 x 1) by scanning tunneling microscopy.

Kitamura, Webb, Lagally, 1993, Physical review letters.

Scanning-tunneling-microscope tip-induced migration of vacancies on GaP(110).

Lagally, Ebert, Urban, 1993, Physical review letters.

Interplay of stress, structure, and stoichiometry in Ge-covered Si(001).

Liu, Lagally, 1996, Physical review letters.

Size relation for surface systems with long-range interactions.

Lagally, Comsa, Zeppenfeld, 1994, Physical review letters.

Ge-induced reversal of surface stress anisotropy on Si(001).

Wu, Lagally, 1995, Physical review letters.

Behavior of steps on Si(001) as a function of vicinality.

Kitamura, Webb, Swartzentruber, 1993, Physical review. B, Condensed matter.

Element Specific Magnetization of Buried Interfaces Probed by Diffuse X-Ray Resonant Magnetic Scattering.

Savage, Mackay, Lagally, 1996, Physical review letters.

Direct determination of the interaction between vacancies on InP(110) surfaces.

Chen, Heinrich, Simón, 1996, Physical review letters.

Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces.

Shih, Webb, Heinrich, 1996, Physical review. B, Condensed matter.

Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001).

Zhang, Lagally, Salling, 1995, Physical review. B, Condensed matter.

Measurements of the gas kinetic temperature in a CH4-H2 discharge during the growth of diamond.

Chu, Jacobs, V. Anderson, 1991, Physical review. A, Atomic, molecular, and optical physics.

Diffraction determination of the size distribution of noncrystalline regions on a crystalline substrate.

Savage, Lagally, Kruger, 1989, Physical Review Letters.

Bonding-geometry dependence of fractal growth on metal surfaces.

Chen, Zhang, Lagally, 1994, Physical review letters.

Ordering kinetics of a chemisorbed overlayer: O/W(110).

Wu, Lagally, Tringides, 1989, Physical review. B, Condensed matter.

Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study.

Kleiner, Webb, M. Lagally, 1991, Physical review letters.

Roughening of steps during homoepitaxial growth on Si(001).

Wu, Savage, Lagally, 1993, Physical review letters.

Growth and equilibrium structures in the epitaxy of Si on Si(001).

Webb, Swartzentruber, Lagally, 1989, Physical review letters.

Energetics and dynamics of Si Ad-dimers on Si(001).

Wu, Zhang, Zandvliet, 1995, Physical review letters.

Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages

Swartzentruber, Lagally, Qin, 2000, Physical review letters.

Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures.

Heinrich, Simón, Lagally, 1995, Physical review. B, Condensed matter.

Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces.

Lagally, Ebert, Urban, 1994, Physical review letters.

Variable-temperature STM measurements of step kinetics on Si(001).

Kitamura, Webb, Swartzentruber, 1993, Physical review. B, Condensed matter.

Reversal of Step Roughness on Ge-Covered Vicinal Si(001).

Wu, Chen, Zhang, 1995, Physical review letters.

Equilibrium shape of two-dimensional islands under stress

Li, Liu, Lagally, 2000, Physical review letters.

Evolution of vicinal Si(001) from double- to single-atomic-height steps with temperature.

Lagally, de Miguel JJ, Kariotis, 1991, Physical Review Letters.

Crystallography of In on GaAs(110): Possible relationship of laterally inhomogeneous structure of Fermi-level pinning.

Savage, Lagally, 1985, Physical review letters.

Adatom pairing structures for Ge on si(100): the initial stage of island formation

Lagally, Qin, 1997, Science.

Mo et al. reply.

Kleiner, Webb, Lagally, 1992, Physical review letters.

Vacancy-vacancy interaction on Ge-covered Si(001).

Wu, Chen, Zhang, 1994, Physical review letters.

Step and kink energetics on GaAs(001).

Zhang, Heller, Lagally, 1993, Physical review letters.

Atomic-scale mechanisms for surfactant-mediated layer-by-layer growth in homoepitaxy.

Zhang, Lagally, 1994, Physical review letters.

Reliability of low-energy electron diffraction for studies of surface order-disorder phenomena.

Moritz, Lagally, 1986, Physical Review Letters.