G. Salace

Relaxation of interface states and positive charge in thin gate oxide after Fowler–Nordheim stress

C. Petit, A. El Hdiy, A. Meinertzhagen, 1993 .

Study of defects induced by high-electric-field stress into a thin gate oxide (11 nm) of metal-oxide-semiconductor capacitors

Dominique Vuillaume, C. Petit, M. Jourdain, 1993 .

Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures

Rachid Bouchakour, Dominique Vuillaume, M. Jourdain, 1993 .

Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness

C. Petit, M. Jourdain, M. Jourdain, 1999 .

Charging effects of MgO under electron bombardment and nonohmic behavior of the induced specimen current

O. Jbara, K. Kim, G. Salace, 1991 .