I. C. Chen

Electron-trap generation by recombination of electrons and holes in SiO2

Chenming Hu, Stephen E. Holland, C. Hu, 1987 .

Intrinsic hot-carrier degradation of nMOSFETs by decoupling PBTI component in 28nm high-k/metal gate stacks

O. Cheng, I. C. Chen, Huan-Chi Ma, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Characteristics of HfZrOx gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology

S. F. Tzou, C. G. Chen, J. Y. Wu, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Substrate hole current and oxide breakdown

Chenming Hu, Stephen E. Holland, C. Hu, 1986 .

Accelerated testing of silicon dioxide wearout

C. Hu, I. Chen, J. Lee, 1987, 1987 Symposium on VLSI Technology.

A 28nm poly/SiON CMOS technology for low-power SoC applications

S. F. Tzou, Y. R. Wang, M. T. Chen, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.