J. M. Tsai

发表

Si and Zn co-doped InGaN-GaN white light-emitting diodes

Jinn-Kong Sheu, Yan-Kuin Su, Wei-Chih Lai, 2003 .

In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Jinn-Kong Sheu, Yan-Kuin Su, Long Wu, 2003 .

GaN-Based Light-Emitting Diodes With Si-doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer

Cheng-Huang Kuo, L. W. Wu, J. M. Tsai, 2002 .

Nitride-based light emitting diodes with Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short period superlattice tunneling contact layer

Jinn-Kong Sheu, Yan-Kuin Su, Shoou-Jinn Chang, 2003 .

High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact

Yan-Kuin Su, Shoou-Jinn Chang, H. M. Lo, 2003 .

n-UV+Blue/Green/Red White Light Emitting Diode Lamps

Jinn-Kong Sheu, Yan-Kuin Su, Shoou-Jinn Chang, 2003 .

GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

Jinn-Kong Sheu, Yan-Kuin Su, Shoou-Jinn Chang, 2002 .