C. Elsass

发表

POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

James S. Speck, Umesh K. Mishra, R. Vetury, 1999 .

Electron transport and intrinsic mobility limits in two-dimensional electron gases of III-V nitride heterostructures

A. Gossard, D. Jena, U. Mishra, 2001, cond-mat/0103461.

Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope

Christiane Poblenz, James S. Speck, Edward T. Yu, 2002 .

Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2001 .

HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Fermi edge singularity observed in GaN/AlGaN heterointerfaces

A. Vardi, J. Speck, D. Gershoni, 2009 .

Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2001 .

Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2000 .

Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling

Christiane Poblenz, James S. Speck, Edward T. Yu, 2002 .

Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

E. Yu, J. Speck, B. Heying, 2001 .

Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy

S. Denbaars, P. Petroff, J. Speck, 2000 .

Electron transport and intrinsic mobility limits in two-dimensional electron gases of III-V nitride heterostructures

A. Gossard, D. Jena, U. Mishra, 2001, cond-mat/0103461.

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2000 .

Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure

S. Denbaars, P. Petroff, S. Keller, 2000 .

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Christiane Poblenz, James S. Speck, William C. Mitchel, 2000 .

Dislocation mediated surface morphology of GaN

James S. Speck, S. P. DenBaars, S. Denbaars, 1999 .

STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS

James S. Speck, Xinru Wu, M. P. Mack, 1998 .

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

James S. Speck, Umesh K. Mishra, Sarah L. Keller, 2000 .

Study of deleterious aging effects in GaN/AlGaN heterostructures

R. Dupuis, U. Mishra, J. Speck, 2003 .

Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

S. Denbaars, U. Mishra, S. Keller, 2000 .

Characterization of an AlGaN/GaN two-dimensional electron gas structure

S. Denbaars, P. Petroff, S. Keller, 2000 .

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

S. Denbaars, P. Petroff, U. Mishra, 1999 .