A. Glowacki

Thermal Laser Stimulation of active devices in silicon - a quantitative FET parameter investigation

C. Boit, C. Boit, S.K. Brahma, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Characterization of thermoelectric devices in ICs as stimulated by a scanning laser beam

C. Boit, A. Glowacki, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Distinction of Photo-Electric and Thermal Effects in a MOSFET by 1064 nm Laser Stimulation

C. Boit, C. Boit, R. Leihkauf, 2006, 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Systematic Characterization of Integrated Circuit Standard Components as Stimulated by Scanning Laser Beam

C. Boit, C. Boit, H. Suzuki, 2007, IEEE Transactions on Device and Materials Reliability.

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Christian Boit, Joachim Wurfl, Arkadiusz Glowacki, 2009, 2009 IEEE International Reliability Physics Symposium.

debug – backside approach and nanoscale challenge

C. Boit, H. Suzuki, T. Kiyan, 2008 .

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Christian Boit, Günther Tränkle, Joachim Würfl, 2011, Microelectron. Reliab..

Backside failure analysis techniques: What's the gain of silicon getting thinner?

D. Abou‐Ras, C. Boit, A. Glowacki, 2014, Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Quantitative aspects of optical IC debug using state-of-the-art backside preparation

C. Boit, A. Glowacki, U. Kerst, 2012, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.