Yu. G. Shreter

Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells

R. I. Gorbunov, N. Bochkareva, Y. Rebane, 2008 .

Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities

R. I. Gorbunov, A. V. Klochkov, Yu. S. Lelikov, 2008 .

CATHODOLUMINESCENCE AND TRANSMISSION ELECTRON MICROSCOPY STUDY OF THE INFLUENCE OF CRYSTAL DEFECTS ON OPTICAL TRANSITIONS IN GAN

M. Guzzi, Konstantin Vassilevski, C. Zanotti-Fregonara, 1999 .

Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

R. I. Gorbunov, A. A. Efremov, N. Bochkareva, 2005 .

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

R. I. Gorbunov, A. A. Efremov, N. Bochkareva, 2006 .

Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN

Manfred Albrecht, Y. Rebane, Y. Shreter, 1997 .