B. Prevot

发表

Pulsed excimer and Nd:YAG laser crystallization of a-Si:H: The specific role of hydrogen

J. Stoquert, E. Fogarassy, S. Unamuno, 1990 .

Raman characterization of semiconducting materials and related structures

J. Wagner, B. Prevot, 1991 .

Raman Determination of the Faust‐Henry Coefficient of GaAs in the 1.9 to 2.7 eV Range at Ordinary and Low Temperatures

B. Prevot, C. Schwab, S. Zekeng, 1988 .

Structural properties of Si1-xGex layers grown onto crystalline or amorphous substrates by pulsed excimer laser annealing of Ge implanted silicon

Jean-Jacques Grob, Eric Fogarassy, Adriana Grob, 1994, Other Conferences.

Near infrared optical and photoelectric properties of Cu2O. III. Interpretation of experimental results

C. Carabatos, B. Prevot, M. Zouaghi, 1972 .

Raman scattering evaluation of lattice damage and electrical activity in Be-implanted GaAs

M. Gargouri, B. Prevot, C. Schwab, 1987 .

Optical Characterization of Implantation Damage Recovery and Electrical Activation in GaAs by Raman Scattering

B. Prevot, C. Schwab, 1984 .

Pulsed Excimer Laser Crystallization and Doping for the Fabrication of Poly-Si and -SiGe TFTs

A. Slaoui, R. Stuck, E. Fogarassy, 1994 .

Raman investigation of submicro-grained Si films obtained by incoherent UV photo-CVD of silicon hydrides

E. Fogarassy, C. Fuchs, B. Prevot, 1998 .

Formation of poly-Si 1- x Ge x using excimer-laser processing

T. Sigmon, A. Slaoui, C. Deng, 1995 .

Excimer Laser Induced Crystallization of Amorphous Silicon-Germanium Films

T. Sigmon, A. Slaoui, C. Deng, 1993 .

Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods

B. Marí, B. Boudart, B. Prevot, 1992 .

First and second order Raman scattering of monocrystalline CuCl

B. Prevot, M. Sieskind, 1973 .

Lattice dynamics of wustite (FeO)

B. Hennion, B. Hennion, A. Revcolevschi, 1977 .

Si. I-x-y . Ge x Cy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon

R. Stuck, J. Stoquert, E. Fogarassy, 1994 .

Evolution of implanted carbon in silicon upon pulsed excimer laser annealing

Dominique Muller, Eric Fogarassy, R. Stuck, 1996 .

Preparation of Si1−xGex thin crystalline films by pulsed excimer laser annealing of heavily Ge implanted Si

A. Grob, J. Grob, J. Stoquert, 1994 .

One-step growth of polycrystalline silicon thin films at low-temperature by ArF excimer laser-induced photo-CVD

J. Stoquert, E. Mathé, S. Unamuno, 1992 .

Multiple-Phonon Resonant Raman Scattering in CuGaS2

N. Yamamoto, B. Prevot, M. Susaki, 1996 .

Rigid ion model lattice dynamics of cuprite (Cu2O)

C. Carabatos, B. Prevot, 1971 .

Near infrared optical and photoelectric properties of Cu2O. I. Infrared absorption in Cu2O after annealing in oxygen or He+ particles bombardments

C. Carabatos, B. Prevot, M. Sieskind, 1972 .

Shallow beryllium implantation in GaAs annealed by rapid thermal annealing

P. Chambon, B. Prevot, M. Berth, 1985 .

First-order Raman line intensity ratio in GaAs: a potential lattice perfection scale

B. Prevot, C. Schwab, J. Biellmann, 1983 .

Normal Modes of Vibrations in CuI

B. Hennion, C. Carabatos, B. Prevot, 1971 .

Normal modes of vibrations in CuBr

B. Hennion, C. Carabatos, B. Prevot, 1973 .

First and Second Order Raman Scattering in CuBr and CuI

B. Prevot, M. Sieskind, 1974, February 1.

Phonon spectrum of CuCl at 4.2K and its temperature dependence

B. Hennion, B. Dorner, B. Prevot, 1977 .

Raman Detection of One-Phonon—Two-Phonon Interactions in CuCl

B. Prevot, R. Pick, G. Hamel, 1974 .

Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation

B. Prevot, C. Schwab, S. Zekeng, 1990 .

Growth of pseudomorphic Si1-yCy and Si1-x-yGexCy alloy layers on Si by ion implantation and pulsed excimer laser induced epitaxy

A. Grob, J. Grob, P. Boher, 1998 .

Strain compensation in Si1-x-yGexCy layers prepared by ion implantation and excimer laser annealing

A. Grob, J. Grob, R. Stuck, 1997 .

Phonon Dispersion in Red HgI2

B. Dorner, B. Prevot, C. Schwab, 1978 .

Raman analysis of the modifications induced by laser processing and hydrogen implantation in carbon films deposited by the ablation technique

Eric Fogarassy, F. Antoni, E. Fogarassy, 1994 .

Raman investigation of the photocarrier properties in both undoped and Fe-doped InP substrates

B. Marí, B. Boudart, B. Prevot, 1993 .

Free-carrier concentration in n-doped InP crystals determined by Raman scattering measurements

B. Boudart, B. Prevot, C. Schwab, 1991 .

Effective n-type doping of InP by the neutron transmutation technique

B. Marí, B. Prevot, C. Schwab, 1993 .

Experimental and numerical analysis of surface melt dynamics in 200 ns-excimer laser crystallization of a-Si films on glass

T. Harrer, E. Fogarassy, S. Unamuno, 2001 .

Synthesis of epitaxial Si1−yCy alloys on Si(001) with high level of non-usual substitutional carbon incorporation

J. Grob, L. Kubler, J. Bischoff, 1995 .

Evolution of implanted carbon in silicon upon pulsed excimer laser annealing: epitaxial Si1−yCy alloy formation and SiC precipitation

A. Grob, R. Stuck, E. Fogarassy, 1997 .

Si1−xGex thin films deposited by the pulsed excimer laser ablation technique

J. Stoquert, F. Antoni, E. Fogarassy, 1995 .

Near Infrared Optical and Photoelectric Properties of Cu2O

C. Carabatos, B. Prevot, M. Sieskind, 1972, April 16.

Ion implantation as a tool for controlling the morphology of porous gallium phosphide

Hans L. Hartnagel, Ion Tiginyanu, Alexander Vogt, 1997 .

Shell-Model Lattice Dynamics of CsCl, CsBr, and Csl

C. Carabatos, B. Prevot, 1972 .

Infra‐red reflectivity of non‐stoichiometric ferrous Oxide

M. Meftah, B. Prevot, M. Sieskind, 1977 .

Pulsed-laser crystallization and doping for the fabrication of high-quality poly-si tfts

Eric Fogarassy, R. Stuck, A. Slaoui, 1993 .

Pulsed laser crystallization of hydrogen-free a-Si thin films for high-mobility poly-Si TFT fabrication

E. Fogarassy, E. Mathé, S. Unamuno, 1993 .

Long-Pulse Duration Excimer Laser Processing in the Fabrication of High Performance Polysilicon TFTs for Large Area Electronics

C. Prat, D. Zahorski, E. Fogarassy, 2001 .

Surface Morphology and Structural Modifications of Si Targets Submitted to Intense Pulsed-Laser Irradiations

P. Dhamelincourt, O. Muller, S. Unamuno, 1996 .

Growth of Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures by ion implantation and pulsed excimer laser-induced epitaxy

Pierre Boher, Dominique Muller, Jean-Jacques Grob, 1997, Photonics West.

Spectroscopic ellipsometry and Raman scattering study of the annealing behavior of Be-implanted GaAs

M. Erman, J. Theeten, P. Chambon, 1984 .

Optical mode inversion near the m-critical point in 2HPbI2

B. Dorner, B. Prevot, A. Frey, 1980 .