M. Hernandez

Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions

C. Laviron, T. Noguchi, D. Zahorski, 2002 .

Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1 μm CMOS devices

C. Laviron, F. Torregrosa, F. Milési, 2005 .

Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

C. Laviron, D. Zahorski, J. Santailler, 2003 .

Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI

T. Emeraud, Pierre Boher, C. Laviron, 2004 .

Integration of a long pulse laser thermal process for ultra shallow junction formation of CMOS devices

C. Laviron, K. Huet, T. Sarnet, 2004, 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004..

Optical characterization of laser processed ultra-shallow junctions

C. Laviron, D. Zahorski, M. Semeria, 2003 .

Laser thermal processing using an optical coating for ultra shallow junction formation

C. Laviron, J. Santailler, T. Sarnet, 2004 .

Excimer laser thermal processing of ultra-shallow junction: laser pulse duration

C. Laviron, J. Santailler, T. Sarnet, 2004 .

Gas immersion laser doping (GILD) for ultra-shallow junction formation

C. Laviron, G. Kerrien, Jacques Boulmer, 2004 .

Formation of upconversion nanoparticles of 18%Yb:1%Er:NAYF4 by ultra-short pulse laser ablation in water

Rainer Kling, Laura Gemini, Marie-Caroline Hernandez, 2016, SPIE BiOS.

Through-silicon-via technology for 3D integration

G. Mori, M. Naik, Z. Cao, 2010, 2010 IEEE International Memory Workshop.