M. Fuse

发表

Effects of Silicon Implantation and Processing Temperature on Performance of Polycrystalline Silicon Thin-Film Transistors Fabricated from Low Pressure Chemical Vapor Deposited Amorphous Silicon

M. H. Zarzycki, I. Wu, Tiao-Yuan Huang, 1987 .

A Fabrication of Homogenious Poly-Si TFT's Using Excimer Laser Annealing

T. Hamano, M. Fuse, Ichirou Asai, 1992 .

Density of States in Amorphous Metals

Y. Tanabe, T. Fujiwara, M. Fuse, 1978 .

Single-transverse-mode 3.4-mW emission of oxide-confined 780-nm VCSELs

T. Nakamura, M. Fuse, J. Sakurai, 1999, IEEE Photonics Technology Letters.

Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films

I. Wu, Tiao-Yuan Huang, A. Chiang, 1989 .

Evaluation of polycrystalline silicon thin film transistors with the charge pumping technique

M. Koyanagi, I. Wu, A. Lewis, 1990, International Technical Digest on Electron Devices.

Crystallization of Silicon Ion Implanted LPCVD Amorphous Silicon Films for High Performance Poly-TFT

T. Y. Huang, I. Wu, A. Chiang, 1990 .

The charge-pumping technique for grain boundary trap evaluation in polysilicon TFTs

M. Koyanagi, I.-W. Wu, M. Koyanagi, 1992, IEEE Electron Device Letters.

An Amorphous Si High Speed Linear Image Sensor

Toshihisa Hamano, Mutsuo Takenouchi, T. Hamano, 1981 .