N. Mise

Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics

Y. Ohji, S. Kamiyama, Y. Nara, 2008, 2008 Symposium on VLSI Technology.

Proposal of Single Metal/Dual High-$k$ Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

Y. Ohji, S. Kamiyama, Y. Nara, 2009, IEEE Transactions on Electron Devices.

Scalability of TiN/HfAlO/TiN MIM DRAM capacitor to 0.7-nm-EOT and beyond

T. Sekiguchi, K. Torii, O. Tonomura, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).