J. S. Major

发表

Singlemode InGaAs/GaAs distributed Bragg reflector laser diodes operating at 1083nm

D. F. Welch, J. S. Major, 1993 .

Instability of partially disordered carbon-doped AlGaAs/GaAs superlattices

Brian T. Cunningham, G. E. Stillman, Louis J. Guido, 1990 .

Layer intermixing and related long-term instability in heavily carbon-doped AlGaAs/GaAs superlattices

Brian T. Cunningham, Louis J. Guido, Nick Holonyak, 1991 .

Microstructure of GaN epitaxy on SiC using AlN buffer layers

Fernando Ponce, D. F. Welch, D. Welch, 1995 .

Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa1−xAs-GaAs superlattices

Brian T. Cunningham, G. E. Stillman, Louis J. Guido, 1990 .

Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing

Robert D. Burnham, F. A. Kish, S. C. Smith, 1990 .

Si impurity‐induced layer disordering of Alx Ga1−x ‐GaAs quantum‐well heterostructures by As‐free open‐tube rapid thermal annealing

A. R. Sugg, F. A. Kish, Nick Holonyak, 1990 .

Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures

Brian T. Cunningham, A. R. Sugg, Louis J. Guido, 1990 .

Carbon diffusion in undoped, n‐type, and p‐type GaAs

Brian T. Cunningham, G. E. Stillman, Louis J. Guido, 1989 .