D.R. Ball

The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

D. McMorrow, B.D. Olson, peixiong zhao, 2005, IEEE Transactions on Nuclear Science.

The effect of metallization Layers on single event susceptibility

R.A. Reed, R.D. Schrimpf, A.S. Kobayashi, 2005, IEEE Transactions on Nuclear Science.

Role of heavy-ion nuclear reactions in determining on-orbit single event error rates

J.W. Howard, peixiong zhao, R. Reed, 2005, IEEE Transactions on Nuclear Science.

Comparing Single Event Upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations

S. Cristoloveanu, peixiong zhao, M. Alles, 2010, 2010 IEEE International SOI Conference (SOI).