Andrei A. Istratov

发表

Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

Eicke R. Weber, Sergey Ganichev, Irina Yassievich, 2000 .

Iron and its complexes in silicon

Eicke R. Weber, H. Hieslmair, E. Weber, 1999 .

Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells

Eicke R. Weber, Wilhelm Warta, Tonio Buonassisi, 2005 .

Influence of interstitial copper on diffusion length and lifetime of minority carriers in p-type silicon

Eicke R. Weber, Thomas Heiser, H. Hieslmair, 1997 .

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Matthew D. Pickett, Eicke R. Weber, Giso Hahn, 2005 .

Control of metal impurities in "dirty" multicrystalline silicon for solar cells

Matthew D. Pickett, Eicke R. Weber, Tonio Buonassisi, 2006 .

Defect recognition and impurity detection techniques in crystalline silicon for solar cells

Eicke R. Weber, H. Hieslmair, R. Schindler, 2002 .

Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon

Eicke R. Weber, Thomas Heiser, H. Hieslmair, 1998 .

Interstitial copper-related center in n-type silicon

Eicke R. Weber, Thomas Heiser, H. Hieslmair, 1997 .

Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction

Eicke R. Weber, Christopher T. Nelson, John C. H. Spence, 2006 .

Physics of Copper in Silicon

Eicke R. Weber, A. Istratov, E. Weber, 2002 .

The dissociation energy and the charge state of a copper-pair center in silicon

Eicke R. Weber, Thomas Heiser, H. Hieslmair, 1998 .