Xi Zhu

Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Qing Luo, Xiaoxin Xu, Hangbing Lv, 2019, Nanoscale Research Letters.

Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

Qing Luo, Xiaoxin Xu, Hangbing Lv, 2018, IEEE Electron Device Letters.

40× Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip

Qing Luo, Jing Liu, Xiaoxin Xu, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements

Qing Luo, Xiaoxin Xu, Hangbing Lv, 2018, IEEE Electron Device Letters.