C. Smith

SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain

R. Jammy, P. D. Kirsch, I. Ok, 2010, 2010 Symposium on VLSI Technology.

Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

Hsing-Huang Tseng, Byoung Hun Lee, R. Jammy, 2007, 2007 IEEE Symposium on VLSI Technology.

CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction

R. Jammy, Jiyoung Kim, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node

R. Jammy, P. Majhi, R. Choi, 2007, 2007 IEEE International Electron Devices Meeting.