Q. Xie

Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

C. Merckling, N. Waldron, N. Collaert, 2016, 2016 IEEE Symposium on VLSI Technology.

Record mobility (μeff ∼3100 cm2/V-s) and reliability performance (Vov∼0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer

R. Rooyackers, A. Vais, D. Lin, 2016, 2016 IEEE Symposium on VLSI Technology.

Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

A. Vais, C. Merckling, N. Waldron, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

R. Degraeve, L. Goux, B. Govoreanu, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.