Yohei Enya

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates

Koji Katayama, Masaki Ueno, Yusuke Yoshizumi, 2009 .

Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates

Nobuhiro Saga, Koji Katayama, Masaki Ueno, 2010 .

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar {2021} GaN Substrates

Hiroshi Nakajima, Masao Ikeda, Masahiro Adachi, 2012 .

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy

Yoichi Kawakami, Akio Kaneta, Mitsuru Funato, 2012 .