F. Chen

Physical mechanism of HfO2-based bipolar resistive random access memory

C. W. Liu, Huan-Lin Chang, Hsuan-Chih Li, 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.

Reliability of ambipolar switching poly-Si diodes for cross-point memory applications

M. H. Lee, H. Y. Lee, F. Chen, 2011, 69th Device Research Conference.

$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

Pang-Shiu Chen, Ming-Jinn Tsai, Ching-Chiun Wang, 2009, IEEE Electron Device Letters.

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

Frederick T. Chen, Y.S. Chen, T. Wu, 2010, IEEE Electron Device Letters.

Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Layer in HfO2 Based RRAM

H. Y. Lee, P. J. Tzeng, P. S. Chen, 2009 .

Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer

S. Maikap, M.-J. Tsai, F. Chen, 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.

Low Programming Current Phase Change Memory Cell with Double GST Thermally Confined Structure

Ming-Jinn Tsai, Chenhsin Lien, Ming-Jer Kao, 2007, 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

A Novel Cross-Spacer Phase Change Memory with Ultra-Small Lithography Independent Contact Area

Y.C. Chen, W.H. Wang, M.J. Kao, 2007, 2007 IEEE International Electron Devices Meeting.

Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure

Ming-Jinn Tsai, Chenhsin Lien, Ming-Jer Kao, 2007, IEEE Electron Device Letters.