M. Tanaka

Improved reverse blocking characteristics in AlGaN=GaN Schottky barrier diodes based on AlN template

T. Egawa, T. Shibata, M. Miyoshi, 2007 .

Improved performance of 264 nm emission AIGaN-based deep ultraviolet light-emitting diodes

T. Egawa, T. Shibata, Jicai Zhang, 2008 .

Grain ejection from the surface of polycrystalline molybdenum irradiated by intense H+ and H+2 ion beams

T. Shibata, M. Tanaka, Y. Nakamura, 1977 .

PLASMA WALL INTERACTION IN DIVA

M. Nagami, M. Shiho, S. Kasai, 1977 .

Growth and optical properties of GaN/AlN quantum wells

S. Fanget, C. Adelmann, C. Adelmann, 2003, cond-mat/0304124.

Improvement of laser-induced surface damage in UV optics by ion beam etching (CsLiB6O10 and fused silica)

Takatomo Sasaki, Yusuke Mori, Mitsuhiro Tanaka, 1999, Laser Damage.

Optical and structural properties of rare earth doped GaN quantum dots

E. Monroy, O. Oda, X. Biquard, 2004 .

2.4 GHz SAW filters using AlN deposited on off-angle R-plane sapphire substrates by MOCVD

Y. Hori, T. Shibata, T. Shibata, 2000, 2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121).

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

Raffaele Colombelli, Francois H. Julien, Maria Tchernycheva, 2005 .

High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

T. Egawa, O. Oda, T. Shibata, 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..