Yuanjie Lü

发表

Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Zhaojun Lin, Hong Chen, Z. Wang, 2012 .

Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

Zhaojun Lin, Hong Chen, Zhifang Cao, 2011 .

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Zhaojun Lin, S. Cai, S. Dun, 2013 .

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Zhaojun Lin, S. Cai, T. Han, 2014 .

Directly extracting both threshold voltage and series resistance from the conductance—voltage curve of an AlGaN/GaN Schottky diode

Zhaojun Lin, S. Cai, T. Han, 2013 .

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Q. Guo, Lei Zhang, Xiangang Xu, 2015 .

A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

Zhaojun Lin, Z. Wang, Yingxia Yu, 2012 .

Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

Zezhao He, Zhihong Feng, S. Liang, 2019, Journal of Semiconductors.

70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHz*

Peng Xu, Tingting Han, Yuangang Wang, 2016 .

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Zhaojun Lin, S. Cai, T. Han, 2014 .

High performance AlGaN/GaN HEMTs with AlN/SiNx passivation*

Guodong Gu, Li Wang, Xin Tan, 2015 .

Low ohmic contact AlN/GaN HEMTs grown by MOCVD

Tingting Han, Peng Xu, Guodong Gu, 2013 .

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Yuanjie Lü, Shaobo Dun, Bo Liu, 2014 .

DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

Peng Xu, Tingting Han, Yuangang Wang, 2014 .

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Xiangang Xu, Zhihong Feng, Yuanjie Lü, 2016 .