D. Shibata

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

H. Matsuo, Y. Uemoto, T. Tanaka, 2008, IEEE Electron Device Letters.

GaN-based natural super junction diodes with multi-channel structures

H. Matsuo, Y. Uemoto, T. Tanaka, 2008, 2008 IEEE International Electron Devices Meeting.

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

H. Matsuo, Y. Uemoto, S. Nagai, 2007, 2007 IEEE International Electron Devices Meeting.

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Tetsuzo Ueda, Shinji Ujita, Hidekazu Umeda, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

1.7 kV/1.0 mΩcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Tetsuzo Ueda, Masahiro Ishida, Tsuguyasu Hatsuda, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

GaN-based multi-junction diode with low reverse leakage current using P-type barrier controlling layer

H. Ishida, T. Murata, D. Ueda, 2011, 2011 International Electron Devices Meeting.