T. Narita

发表

Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress

S. Yamaguchi, J. Suda, T. Uesugi, 2022, Scientific Reports.

Impacts of high temperature annealing above 1400° C under N2 overpressure to activate acceptors in Mg-implanted GaN

M. Boćkowski, J. Suda, T. Kachi, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

A. Uedono, M. Boćkowski, S. Chichibu, 2020, Scientific Reports.

Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

A. Uedono, K. Ueno, S. Chichibu, 2019, Japanese Journal of Applied Physics.

Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer

M. Nagao, T. Kachi, N. Ikarashi, 2019, Applied Physics Express.

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

A. Uedono, S. Chichibu, S. Ishibashi, 2019, physica status solidi (b).

Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H

A. Uedono, T. Narita, K. Shima, 2018, Applied Physics Letters.

Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN

T. Kimoto, J. Suda, T. Kachi, 2020, Japanese Journal of Applied Physics.

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

T. Kimoto, J. Suda, T. Kachi, 2019, IEEE Electron Device Letters.

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

T. Kimoto, J. Suda, T. Kachi, 2018 .

Effects of the sequential implantation of Mg and N ions into GaN for p-type doping

M. Boćkowski, J. Suda, T. Kachi, 2021, Applied Physics Express.

Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration

M. Boćkowski, J. Suda, M. Nagao, 2020, Applied Physics Express.

Resistive heater element made of highly durable TaC-coated graphite for high-temperature and highly corrosive processes: application to MOCVD GaN epitaxial growth

D. Nakamura, T. Narita, Taishi Kimura, 2019, Japanese Journal of Applied Physics.

Optical spectra of (1‐101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate

Eun‐Hee Kim, N. Sawaki, T. Narita, 2006 .

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE

N. Sawaki, M. Yamaguchi, T. Narita, 2006 .

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

M. Boćkowski, J. Suda, T. Kachi, 2020 .

Progress on and challenges of p-type formation for GaN power devices

M. Boćkowski, J. Suda, T. Kachi, 2020 .

Reliability Evaluation of Al2O3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN

T. Kachi, D. Kikuta, T. Uesugi, 2013 .

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

T. Hashizume, T. Kachi, D. Kikuta, 2012 .

Why do electron traps at EC –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?

J. Suda, T. Kachi, M. Horita, 2020, Japanese Journal of Applied Physics.

Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices

J. Suda, M. Nagao, T. Kachi, 2019, Japanese Journal of Applied Physics.

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

M. Boćkowski, J. Suda, T. Kachi, 2019, Applied Physics Express.

Mg-implanted bevel edge termination structure for GaN power device applications

M. Boćkowski, J. Suda, T. Kachi, 2021 .

Erratum: “Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface”

K. Shiraishi, T. Kachi, D. Kikuta, 2018 .

Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings

M. Boćkowski, J. Suda, T. Kachi, 2021, Applied Physics Express.

Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition

S. Sugawa, A. Teramoto, R. Kuroda, 2017, IEEE Electron Device Letters.

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

T. Hashizume, T. Kachi, D. Kikuta, 2012 .

Study of etching‐induced damage in GaN by hard X‐ray photoelectron spectroscopy

T. Kachi, D. Kikuta, T. Uesugi, 2011 .

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

K. Shiraishi, T. Kachi, D. Kikuta, 2018 .

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

J. Suda, J. Kojima, T. Uesugi, 2021, Applied Physics Letters.

Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

J. Suda, T. Kachi, Y. Osada, 2021 .

Band offset of Al1−xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy

Tomohiko Mori, D. Kikuta, T. Narita, 2017 .

Time‐resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate

Eun‐Hee Kim, N. Sawaki, M. Yamaguchi, 2007 .

Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

N. Sawaki, M. Yamaguchi, T. Narita, 2007 .

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices

K. Shiraishi, T. Kachi, D. Kikuta, 2020 .

Identification of origin of EC –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy

J. Suda, T. Kachi, M. Horita, 2020, Applied Physics Express.

Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application

S. Wada, T. Narita, K. Horibuchi, 2021 .

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

H. Amano, T. Takeuchi, S. Tomai, 2023, Crystals.

Electronic degeneracy conduction in highly Si-doped Al0.6Ga0.4N layers based on the carrier compensation effect

H. Makino, T. Narita, K. Kataoka, 2020, Applied Physics Letters.

Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template

H. Makino, T. Narita, K. Horibuchi, 2020 .

Low resistivity of highly Si-doped n-type Al0.62Ga0.38N layer by suppressing self-compensation

H. Makino, T. Narita, K. Kataoka, 2020, Applied Physics Express.

Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

T. Kachi, T. Narita, K. Tomita, 2021 .

Impact ionization coefficients and critical electric field in GaN

T. Kimoto, J. Suda, T. Kachi, 2021 .

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

T. Kachi, Y. Tokuda, T. Narita, 2018 .

Defect Detection in Semiconductor Materials by Luminescence Analysis

T. Kachi, K. Hattori, M. Kanechika, 2019 .

Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN

A. Uedono, M. Kanechika, T. Narita, 2015 .

Characterization of Ar ion etching induced damage for GaN

T. Nonaka, N. Takahashi, M. Kanechika, 2012 .

Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method

T. Kachi, T. Narita, Taketomo Sato, 2022, Journal of Applied Physics.

Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

T. Kachi, Y. Tokuda, T. Narita, 2019, Japanese Journal of Applied Physics.

Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes

T. Kimoto, J. Suda, T. Kachi, 2019, Japanese Journal of Applied Physics.

P-type doping of GaN by magnesium ion implantation

T. Kachi, T. Uesugi, T. Narita, 2016 .

Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

J. Suda, T. Kachi, T. Uesugi, 2022, Applied Physics Letters.

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

M. Boćkowski, J. Suda, T. Kachi, 2022, Journal of Applied Physics.

Characterization of Defects and Deep Levels for GaN Power Devices

T. Kachi, T. Narita, 2020 .

Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)

J. Suda, D. Kikuta, T. Uesugi, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

D. Kikuta, M. Horita, T. Narita, 2021 .

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

S. Yamaguchi, J. Suda, J. Kojima, 2021, Applied Physics Express.

Future Challenges: Defects in GaN Power Devices due to Fabrication Processes

T. Kachi, T. Narita, 2020 .

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

T. Kachi, D. Kikuta, T. Narita, 2020, Applied Physics Express.

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN

T. Kachi, T. Uesugi, T. Narita, 2018 .

Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate

J. Suda, T. Kachi, M. Horita, 2021 .

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

A. Uedono, M. Boćkowski, J. Suda, 2022, Journal of Applied Physics.

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

M. Boćkowski, J. Suda, T. Kachi, 2020, Applied Physics Express.

Strain-induced step bunching in orientation-controlled GaN on Si

T. Narita, K. Tomita, K. Horibuchi, 2016 .

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures

T. Kachi, T. Narita, K. Tomita, 2018, Applied Physics Express.

Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway

Heiji Watanabe, T. Kachi, T. Shimura, 2021 .

Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction

T. Kimoto, J. Suda, T. Kachi, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination

T. Kimoto, J. Suda, T. Kachi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing

A. Uedono, T. Kachi, T. Narita, 2022 .

The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth

N. Sawaki, M. Yamaguchi, T. Narita, 2003 .

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

T. Kimoto, J. Suda, T. Kachi, 2019, Applied Physics Letters.

Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate

Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi, 2004 .

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN

T. Kachi, T. Narita, Taketomo Sato, 2018, Japanese Journal of Applied Physics.

Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes With Various Doping Concentrations

T. Kimoto, J. Suda, T. Kachi, 2022, IEEE Electron Device Letters.

X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN

M. Boćkowski, T. Kachi, T. Narita, 2021 .

Comprehensive Study of Electron Conduction and Its Compensation for Degenerate Si‐Doped AlN‐Rich AlGaN

T. Narita, K. Kataoka, K. Nagata, 2023, physica status solidi (RRL) – Rapid Research Letters.

Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions

J. Suda, T. Uesugi, T. Oka, 2023, Applied Physics Letters.

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

T. Kimoto, J. Suda, T. Kachi, 2018, Applied Physics Letters.

Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing

M. Boćkowski, M. Nagao, T. Kachi, 2023, physica status solidi (RRL) – Rapid Research Letters.

Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

T. Kimoto, J. Suda, T. Kachi, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence

T. Kachi, T. Narita, K. Tomita, 2024, physica status solidi (b).

TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors

T. Kimoto, K. Nakashima, D. Nakamura, 2017 .

Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing

M. Boćkowski, T. Kachi, T. Narita, 2023, Japanese Journal of Applied Physics.

Transport properties of the two-dimensional electron gas in AlxGa1−xN/GaN heterostructures

N. Sawaki, M. Yamaguchi, T. Narita, 2007 .

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

J. Suda, T. Kachi, T. Narita, 2019, physica status solidi (b).

Estimation of internal quantum efficiency in InGaN-based light emitting diodes using electroluminescence decay times

G. Hatakoshi, S. Nunoue, S. Saito, 2008 .