M. Kosaki

发表

Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress

S. Yamaguchi, J. Suda, T. Uesugi, 2022, Scientific Reports.

High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate

Y. Okamoto, K. Hataya, K. Hirata, 2004, IEEE Transactions on Electron Devices.

Polarization Engineering on Buffer Layer in GaN-Based Heterojunction FETs

K. Hirata, H. Miyamoto, Y. Ando, 2008, IEEE Transactions on Electron Devices.

A 149W recessed-gate AlGaN/GaN FP-FET

Y. Okamoto, K. Hataya, K. Hirata, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

Control of strain in GaN by a combination of H2 and N2 carrier gases

H. Amano, I. Akasaki, S. Nitta, 2001 .

High power AlGaN/GaN heterojunction FETs for base station applications

H. Miyamoto, Y. Ando, Y. Okamoto, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Correlation between micropipes on SiC substrate and dc characteristics of AlGaN∕GaN high-electron mobility transistors

H. Okumura, T. Mitani, S. Nakashima, 2006 .

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

J. Suda, J. Kojima, T. Uesugi, 2021, Applied Physics Letters.

Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

H. Amano, I. Akasaki, S. Nitta, 2001 .

In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology

H. Amano, I. Akasaki, M. Iwaya, 2002 .

179 W recessed-gate AlGaN/GaN heterojunction FET with field-modulating plate

H. Miyamoto, Y. Ando, Y. Okamoto, 2004 .

Evaluation of AlGaN/GaN-HFET with HfAlO gate insulator

M. Shimizu, H. Okumura, A. Kinoshita, 2007 .

Crystal Growth of High‐Quality AlInN/GaN Superlattices and of Crack‐Free AlN on GaN: Their Possibility of High Electron Mobility Transistor

H. Amano, I. Akasaki, Tetsuya Nakamura, 2001 .

Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)

J. Suda, D. Kikuta, T. Uesugi, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy.

H. Amano, I. Akasaki, S. Nitta, 2000 .

Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2001 .

Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2002 .

Control of crystalline quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas

H. Amano, I. Akasaki, T. Kashima, 2000 .

Control of strain in GaN using an In doping-induced hardening effect

H. Amano, I. Akasaki, T. Kashima, 2001 .

Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions

J. Suda, T. Uesugi, T. Oka, 2023, Applied Physics Letters.

Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate

T. Nakayama, Y. Okamoto, M. Kosaki, 2004, IEEE Transactions on Microwave Theory and Techniques.

MOVPE growth and characterization of Al1−xInxN/GaN multiple layers

H. Amano, I. Akasaki, Tetsuya Nakamura, 2002 .