S. Usami

发表

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

T. Tohei, A. Sakai, N. Ikarashi, 2021 .

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

M. Boćkowski, H. Amano, A. Tanaka, 2019, AIP Advances.

Effect of Additional N2O Gas on the Suppression of Polycrystal Formation and High-rate GaN Crystal Growth by OVPE Method

M. Hata, Y. Mori, M. Maruyama, 2021, Journal of Crystal Growth.

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates

H. Amano, S. Nitta, S. Usami, 2019, Japanese Journal of Applied Physics.

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

H. Amano, Y. Sugawara, Y. Ishikawa, 2018 .

Effective neutron detection using vertical-type BGaN diodes

H. Amano, S. Chichibu, Ken Mochizuki, 2021, Journal of Applied Physics.

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

H. Amano, Koji Matsumoto, S. Usami, 2018 .

Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

H. Amano, S. Nitta, S. Usami, 2019, Applied Physics Express.

Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

H. Amano, S. Nitta, S. Usami, 2019, Japanese Journal of Applied Physics.

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current

H. Amano, S. Nitta, S. Usami, 2019, Applied Physics Letters.

Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes

A. Tanaka, H. Amano, S. Nitta, 2017 .

Low Surface Potential with Glycoconjugates Determines Insect Cell Adhesion at Room Temperature

R. Kanzaki, H. Mitsuno, S. Takemi, 2022, The journal of physical chemistry letters.

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Atsushi Tanaka, Takashi Sekiguchi, Yoshio Honda, 2017 .

Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon

H. Ogi, Y. Mori, Masayuki Imanishi, 2022, Applied Physics Express.

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching (Phys. Status Solidi B 5/2018)

H. Amano, Koji Matsumoto, S. Usami, 2018 .

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

T. Tohei, Masayuki Imanishi, T. Hamachi, 2023, Scientific Reports.

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

K. Shiraishi, H. Amano, Y. Harashima, 2020, 2004.06876.

Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

H. Amano, Luke Yates, K. Nagamatsu, 2018, 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).

Effects of pulse duration on laser-induced crystallization of urea from 300 to 1200 fs: impact of cavitation bubbles on crystal nucleation

K. Tsukamoto, K. Takano, H. Adachi, 2022, Applied Physics A.

Evidence for Solution-Mediated Phase Transitions in Kidney Stones: Phase Transition Exacerbates Kidney Stone Disease

K. Tsukamoto, K. Takano, R. Ando, 2023, Crystal Growth & Design.

GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications

H. Amano, S. Usami, Y. Honda, 2015 .

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering

H. Amano, A. Tamura, S. Nitta, 2016 .

Thermodynamic analysis of oxide vapor phase epitaxy of GaN

M. Hata, Yuki Sakurai, M. Maruyama, 2023, Journal of Applied Physics.