Tingting Wang

发表

Design of bevel junction termination extension structure for high-performance vertical GaN Schottky barrier diode

Hongdong Li, J. Ao, Tingting Wang, 2021, Superlattices and Microstructures.

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes*

J. Ao, Jin-cheng Zhang, Tingting Wang, 2019, Chinese Physics Letters.

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Jiyu Zhou, J. Ao, Tingting Wang, 2021, IEEE Transactions on Electron Devices.

Recessed-anode AlGaN/GaN diode with a high Baliga's FOM by combining a p-GaN cap layer and an anode-connected p-GaN buried layer

J. Ao, Tingting Wang, Liuan Li, 2021, Superlattices and Microstructures.

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

Y. Hao, Xiao-hua Ma, J. Ao, 2021, IEEE Transactions on Electron Devices.

Localized surface plasmon and transferred electron enhanced UV emission of ZnO by periodical aluminum nanoparticle arrays

Xiao-hua Ma, Yi Hao, Chang Liu, 2022, Journal of Luminescence.

Design of vertical diamond Schottky barrier diode with a novel beveled junction termination extension

G. Zou, Tingting Wang, Liuan Li, 2022, Diamond and Related Materials.

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Xiao-hua Ma, J. Ao, Tingting Wang, 2022, Journal of Physics D: Applied Physics.

Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect

Y. Hao, Xiao-hua Ma, Chang Liu, 2021, Nanoscale Research Letters.

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

J. Ao, Tingting Wang, Xiao Wang, 2023, IEEE Transactions on Electron Devices.