Xiaobo Li

发表

Design of bevel junction termination extension structure for high-performance vertical GaN Schottky barrier diode

Hongdong Li, J. Ao, Tingting Wang, 2021, Superlattices and Microstructures.

Vertical GaN Shottky barrier diode with thermally stable TiN anode*

Xiaobo Li, Taofei Pu, Shaoheng Cheng, 2021, Chinese Physics B.

Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

J. Ao, Xiaobo Li, Taofei Pu, 2021 .

Band alignment between NiO x and nonpolar/semipolar GaN planes for selective-area-doped termination structure*

Jiyu Zhou, J. Ao, Xiaobo Li, 2021, Chinese Physics B.

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

J. Ao, Xiaobo Li, Taofei Pu, 2019, IEEE Electron Device Letters.

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes*

J. Ao, Jin-cheng Zhang, Tingting Wang, 2019, Chinese Physics Letters.

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Jiyu Zhou, J. Ao, Tingting Wang, 2021, IEEE Transactions on Electron Devices.

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

Yuyu Bu, Jiyu Zhou, J. Ao, 2021, Applied Surface Science.

Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer

Yong Chen, Youming Lu, Xinke Liu, 2020, Journal of Physics D: Applied Physics.

Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

Yuyu Bu, J. Ao, Xiaobo Li, 2018, Applied Surface Science.

Normally-off AlGaN/GaN heterostructure junction field-effect transistors with blocking layers

Xiaomin Li, L. Wang, J. Ao, 2018, Superlattices and Microstructures.

GaN Schottky barrier diodes for microwave power transmission

Yuyu Bu, J. Ao, Xiaobo Li, 2018, 2018 IEEE MTT-S International Wireless Symposium (IWS).

A promising CuOx/WO3 p-n heterojunction thin-film photocathode fabricated by magnetron reactive sputtering

Yuyu Bu, T. Zheng, J. Ao, 2019, International Journal of Hydrogen Energy.

Normally off AlGaN/GaN ion-sensitive field effect transistors realized by photoelectrochemical method for pH sensor application

J. Ao, Xiaobo Li, Taofei Pu, 2019, Superlattices and Microstructures.

GaN Schottky barrier diodes with nickel nitride anodes sputtered at different nitrogen partial pressure

Motoo Ito, J. Ao, Xiaobo Li, 2019, Vacuum.

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

J. Ao, Xiaobo Li, Taofei Pu, 2021, IEICE Electron. Express.

GaN Schottky barrier diode with thermally stable nickel nitride electrode deposited by reactive sputtering

J. Ao, Xiaobo Li, Taofei Pu, 2019, Materials Science in Semiconductor Processing.

Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

J. Ao, Xiaobo Li, Taofei Pu, 2020, IEEE Electron Device Letters.

Normally-Off Metal-Insulator-Semiconductor P-GaN Gated AlGaN/GaN High Electron Mobility Transistors with Low Gate Leakage Current

Hongwei Gao, J. Ao, Xiaobo Li, 2023, Journal of Crystal Growth.

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

J. Ao, Xiaobo Li, Taofei Pu, 2022, IEEE Sensors Journal.

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Hongdong Li, J. Ao, Xiaobo Li, 2021, IEEE Sensors Journal.

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

J. Ao, Xiaobo Li, Taofei Pu, 2020, IEEE Sensors Journal.

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

J. Ao, Xiaobo Li, Taofei Pu, 2020, IEEE Transactions on Electron Devices.

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

H. Chiu, Youming Lu, J. Ao, 2022, IEEE Transactions on Electron Devices.

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

Youming Lu, Xinke Liu, J. Ao, 2021, IEEE Transactions on Electron Devices.

Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

J. Ao, Xiaobo Li, Taofei Pu, 2018, Superlattices and Microstructures.

Effect of Helium-Implanted Edge Termination on GaN-on-GaN Schottky Barrier Diode Temperature Sensors

Xiaobo Li, Taofei Pu, Xinke Liu, 2023, IEEE Sensors Journal.